k i semiconductor applications high current applications . absolute maximum ratings a =25 electrical characteristics a =25 symbol characteristics min typ max unit test conditions bv cbo collector - base breakdown voltage 35 v i c =1 0 0 a, i e =0 bv ceo collector - emitter breakdown voltage 3 0 v i c = 10 m a, i b =0 bv ebo emitter - base breakdown voltage 5 v i e =1 m a i c =0 h fe 1 dc current gain 10 0 32 0 v ce = 1 v, i c = 1 00 m a h fe 2 dc current gain 35 v ce =1v, i c =700m a v ce(sat) collector - em itter saturation voltage 0.5 v i c =500ma, i b =20ma v be base - emitter voltage 05 0.8 v v ce =1v, i c =10m a i cbo collector cut - off current 100 na v cb = 35 v, i e =0 i ebo emitter cut - off current 100 na v eb = 5 v, i c =0 f t current gain - bandwidth product 12 0 mhz v ce = 5 v, i c =10m a cob output capacitance 13 pf v cb = 10 v, i e =0 f=1 mhz fe classification o y 1 00 20 0 160 320 t stg storage temperature - 55~150 t j junction temperature 1 50 p c collector dissipation 60 0mw v cbo collector - base voltage 35 v v ceo collector - emitter voltage 3 0 v v ebo emitter - base voltage 5 v i c collector current 80 0m a 1 D emitter e 2 D collector c 3 D ba se b to - 92 c 3203 n p n s i l i c o n t r a n s i s t o r
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